Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor

Authors
Bezryadin, NN Domashevskaya, EP Kotov, GI Kuz'menko, RV Sumets, MP Arsent'ev, IN
Citation
Nn. Bezryadin et al., Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor, SEMICONDUCT, 33(6), 1999, pp. 665-667
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
6
Year of publication
1999
Pages
665 - 667
Database
ISI
SICI code
1063-7826(199906)33:6<665:ESITSR>2.0.ZU;2-B
Abstract
The parameters of charge localization centers in the skin layer of gallium arsenide treated in selenium-arsenic vapor are investigated by deep-layer t ransient spectroscopy. It is established that the addition of arsenic to th e vapor phase slows down the reaction of heterovalent substitution of selen ium for arsenic in GaAs and reduces the density of centers in the skin laye r of GaAs. (C) 1999 American Institute of Physics. [S1063-7826(99)02006-2].