Dimensionality effects in the hot-electron photoluminescence of gallium arsenide: 2D-quasi-3D transition

Authors
Sapega, VF Perel', VI Mirlin, DN Akimov, IA Ruf, T Cardona, M Winter, W Eberl, K
Citation
Vf. Sapega et al., Dimensionality effects in the hot-electron photoluminescence of gallium arsenide: 2D-quasi-3D transition, SEMICONDUCT, 33(6), 1999, pp. 681-683
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
6
Year of publication
1999
Pages
681 - 683
Database
ISI
SICI code
1063-7826(199906)33:6<681:DEITHP>2.0.ZU;2-W
Abstract
The influence of the miniband width in superlattices on the polarization ch aracteristics of hot-electron photoluminescence (HEPL) is investigated. It is shown that the energy dependence and the magnetic field dependence of po larization change significantly as the width of the electron minibands incr eases. The limits of applicability are established for the tight-binding ap proximation in the calculation of optical transitions in superlattices. (C) 1999 American Institute of Physics. [S1063-7826(99)02406-0].