Enhanced Faraday rotation in an asymmetric semiconductor microcavity

Authors
Haddad, M Andre, R Frey, R Flytzanis, C
Citation
M. Haddad et al., Enhanced Faraday rotation in an asymmetric semiconductor microcavity, SOL ST COMM, 111(2), 1999, pp. 61-65
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
111
Issue
2
Year of publication
1999
Pages
61 - 65
Database
ISI
SICI code
0038-1098(1999)111:2<61:EFRIAA>2.0.ZU;2-G
Abstract
We report two orders of magnitude enhancement of the Faraday rotation in re flection (polar Ken effect) when a single semimagnetic semiconductor quantu m well is inserted in an asymmetric microcavity operating in the strong cou pling regime and with minimum reflectivity at the polariton frequencies. Fa raday rotations of 140 degrees are observed at 0.4 T magnetic fields. The t echnique can be used for very sensitive spectroscopic studies. (C) 1999 Els evier Science Ltd. All rights reserved.