Vv. Krivolapchuk et al., Collective properties of spatially indirect excitons in asymmetric GaAs AlGaAs double quantum wells, SOL ST COMM, 111(1), 1999, pp. 49-54
The paper is devoted to the investigation of low-temperature (T = 1.8 and 4
.2 K) luminescence spectra of double GaAs/ Al0.33Ga0.67As asymmetric quantu
m wells (DQW) under the changing electric field V-dc, applied normally to t
he plane of layers of DQWs. It was found that the full width of half maximu
m (FWHM) of the indirect exciton luminescence line (IX) in some interval of
V-dc values narrows sharply (up to 3.5 times). In:the transition range of
V-dc values, in which there arises a sharp decrease (or increase) of FWHM,
abnormally large fluctuations at the time of IX intensity are observed. The
dependence of FWHM on the optical pumping level Ip reveals a sharp FWHM de
crease in some interval of Ip values. The results are discussed using the,a
ssumption that the observed phenomena are due to the appearance of a conden
sed state in collective interacting spatially indirect excitons in the DQW,
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