Anomalous behaviour of the current noise in long-narrow-channel MOSFETS and its interpretation

Authors
Vandamme, LKJ Kiss, LB Stoelinga, OLJ
Citation
Lkj. Vandamme et al., Anomalous behaviour of the current noise in long-narrow-channel MOSFETS and its interpretation, SOL ST ELEC, 43(4), 1999, pp. 697-700
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
4
Year of publication
1999
Pages
697 - 700
Database
ISI
SICI code
0038-1101(199904)43:4<697:ABOTCN>2.0.ZU;2-X
Abstract
An anomalous behaviour of noise in n-type CMOSFETs with narrow, long channe ls has been found. At fixed drain voltage, biasing the device well in satur ation, the noise current abruptly decreased by more than an order of magnit ude with increasing gate voltage well above the threshold voltage. We will prove that the effect is due to the strong resistance noise of the parasiti c source series resistance. An earlier, controversial result of Park and Va n der Ziel can be reinterpreted in the same way. (C) 1999 Elsevier Science Ltd. All rights reserved.