Low frequency excess noise measurements in high frequency polysilicon emitter bipolar transistors

Authors
Routoure, JM Lepaisant, J Bloyet, D Bardy, S Biard, C Gambus, L Lebailly, J
Citation
Jm. Routoure et al., Low frequency excess noise measurements in high frequency polysilicon emitter bipolar transistors, SOL ST ELEC, 43(4), 1999, pp. 729-740
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
4
Year of publication
1999
Pages
729 - 740
Database
ISI
SICI code
0038-1101(199904)43:4<729:LFENMI>2.0.ZU;2-O
Abstract
Low frequency noise measurements have been carried out for polysilicon emit ter NPN bipolar transistors. Noise sources associated with the mechanisms o f conduction in the emitter: tunneling through the monopolysilicon interfac e, diffusion and metallic contact recombination, have been identified, A sl ight dependence between the excess noise level and the junction area is obs erved. (C) 1999 Elsevier Science Ltd. All rights reserved.