Investigation of an InGaP GaAs resonant-tunneling transistor (RTT)

A new InGaP/GaAs resonant-tunneling transistor (RTT) has been fabricated su ccessfully and demonstrated. A 5-period InGaP/GaAs superlattice is used as a confinement barrier for holes and an RT route for electrons. A transistor action with a common-emitter current gain up to 220 and an offset voltage of 85 mV are obtained. Due to the RT effect within the 5-period superlattic e near the emitter-base p-n junction region, the N-shaped negative-differen tial-resistance (NDR) phenomena are observed at room temperature. Furthermo re, the N-shaped NDR is found both in the saturation and forward-active reg ion. The widely operating regime of NDR may provide the potential for pract ical applications. (C) 1999 Elsevier Science Ltd. All rights reserved.