Measurement of interface states parameters of Si1-x-yGexCy/TiW Schottky contacts using Schottky capacitance spectroscopy

Authors
Zamora, M Reeves, GK Gazecki, G Mi, J Yang, CY
Citation
M. Zamora et al., Measurement of interface states parameters of Si1-x-yGexCy/TiW Schottky contacts using Schottky capacitance spectroscopy, SOL ST ELEC, 43(4), 1999, pp. 801-808
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
4
Year of publication
1999
Pages
801 - 808
Database
ISI
SICI code
0038-1101(199904)43:4<801:MOISPO>2.0.ZU;2-6
Abstract
The interface states parameters of density, distribution and capture cross- section for Si1 - x - yGexCy/TiW Schottky contacts has been found from forw ard bias capacitance measurements using the Schottky capacitance spectrosco py (SCS) technique. It was found that the interface states parameters stron gly depend on the composition and quality of the Si1 - x - y GexCy alloy la yer. 'Negative capacitance' effects, observed for low measurement frequenci es, limit the application of the Schottky diode model used to calculate the interface states parameters. (C) 1999 published by Elsevier Science Ltd. A ll rights reserved.