Xr. Zou et al., Raman characteristics of hard carbon-nitride films deposited by reactive ionized cluster beam techniques, THIN SOL FI, 345(2), 1999, pp. 208-211
Raman spectroscopy was used to investigate the effect of nitrogen pressure
on the structure of carbon-nitride films deposited by the reactive ionized
cluster beam (RICB) technique. It is noted that a peak centered at about 12
48 cm(-1) emerges in the Raman spectra and becomes more pronounced when nit
rogen pressure is increased. This peak can be attributed to the covalent N-
C single bonds. Moreover, the structure of the deposited films changes from
DLC to diamond, and finally to carbon-nitride with the increase of nitroge
n pressure. The results of Knoop hardness tests show the films have rather
high hardness up to 6200 kg f/mm(2). (C) 1999 Published by Elsevier Science
Ltd. All rights reserved.