Raman characteristics of hard carbon-nitride films deposited by reactive ionized cluster beam techniques

Citation
Xr. Zou et al., Raman characteristics of hard carbon-nitride films deposited by reactive ionized cluster beam techniques, THIN SOL FI, 345(2), 1999, pp. 208-211
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
345
Issue
2
Year of publication
1999
Pages
208 - 211
Database
ISI
SICI code
0040-6090(19990521)345:2<208:RCOHCF>2.0.ZU;2-C
Abstract
Raman spectroscopy was used to investigate the effect of nitrogen pressure on the structure of carbon-nitride films deposited by the reactive ionized cluster beam (RICB) technique. It is noted that a peak centered at about 12 48 cm(-1) emerges in the Raman spectra and becomes more pronounced when nit rogen pressure is increased. This peak can be attributed to the covalent N- C single bonds. Moreover, the structure of the deposited films changes from DLC to diamond, and finally to carbon-nitride with the increase of nitroge n pressure. The results of Knoop hardness tests show the films have rather high hardness up to 6200 kg f/mm(2). (C) 1999 Published by Elsevier Science Ltd. All rights reserved.