Fluorine-doped tin oxide films were deposited on silicon, glass and quartz
substrates at 370-490 degrees C by atmospheric-pressure chemical vapor depo
sition from (CH3(CH2)(3))(2)Sn(O2CCF3)(2) and oxygen. Backscattering spectr
a indicate the films are stoichiometric with O/Sn ratios of 1.9-2.0. Nuclea
r reaction analysis (NRA) for fluorine gives F/Sn ratios of 0.005-0.015 wit
h the amount of fluorine in the films increasing with increasing deposition
temperature. The films are transparent in the visible region (>75%) and ha
ve resistivities as low as 8.2 x 10(-4) Ohm cm. X-ray diffraction studies i
ndicate the films deposited on glass are polycrystalline. (C) 1999 Elsevier
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