Atmospheric-pressure chemical vapor deposition of fluorine-doped tin oxidethin films

Fluorine-doped tin oxide films were deposited on silicon, glass and quartz substrates at 370-490 degrees C by atmospheric-pressure chemical vapor depo sition from (CH3(CH2)(3))(2)Sn(O2CCF3)(2) and oxygen. Backscattering spectr a indicate the films are stoichiometric with O/Sn ratios of 1.9-2.0. Nuclea r reaction analysis (NRA) for fluorine gives F/Sn ratios of 0.005-0.015 wit h the amount of fluorine in the films increasing with increasing deposition temperature. The films are transparent in the visible region (>75%) and ha ve resistivities as low as 8.2 x 10(-4) Ohm cm. X-ray diffraction studies i ndicate the films deposited on glass are polycrystalline. (C) 1999 Elsevier Science S.A. All rights reserved.