A new InGaP GaAs double delta-doped heterojunction bipolar transistor ((DHBT)-H-3)

Authors
Cheng, SY Wang, WC Chang, WL Chen, JY Pan, HJ Liu, WC
Citation
Sy. Cheng et al., A new InGaP GaAs double delta-doped heterojunction bipolar transistor ((DHBT)-H-3), THIN SOL FI, 345(2), 1999, pp. 270-272
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
345
Issue
2
Year of publication
1999
Pages
270 - 272
Database
ISI
SICI code
0040-6090(19990521)345:2<270:ANIGDD>2.0.ZU;2-Y
Abstract
A new InGaP/GaAs double delta-doped heterojunction bipolar transistor ((DHB T)-H-3) has been fabricated successfully and demonstrated. Due to the emplo yment of delta-doped sheets, the potential spikes at emitter-base (E-B) and base-collector (B-C) heterojunctions are suppressed considerably. Therefor e, good transistor performance including higher current gain and lower knee voltage are obtained. (C) 1999 Elsevier Science S.A. All rights reserved.