Characterization of ceria yttria stabilized zirconia grown on silicon substrate

Analyses of phase composition and electrical characterization of double-lay er CeO2/yttria stabilized zirconia (YSZ) and single-layer CeO2, YSZ dielect rics deposited onto Si(100) substrate at 473 K by electron beam evaporation as well as characterization of the quality of interfaces between the oxide layers and silicon substrates were performed. The structure of all investi gated oxide layers was found to be of the fee fluorite type. A layer of amo rphous SiO2 was formed at the interface between the oxide layers and the Si substrate. The double-layer CeO(2/)YSZ is a mixed ionic-electronic conduct or. The electrical conductivity of investigated oxide layers and the averag e grain size are changed during a post-deposition thermal treatment. The te mperature dependence of the activation energy of electrical conductivity is connected with the different impurity states in the oxide layers. With res pect to the lowest density of defects assessed from deep-level transient sp ectroscopy (DLTS) measurements, the CeO2/Si interface seems to be an optimu m compared to the other oxide layer configurations. (C) 1999 Elsevier Scien ce S.A. All rights reserved.