Indium tin oxide contacts to gallium nitride optoelectronic devices

Authors
Margalith, T Buchinsky, O Cohen, DA Abare, AC Hansen, M DenBaars, SP Coldren, LA
Citation
T. Margalith et al., Indium tin oxide contacts to gallium nitride optoelectronic devices, APPL PHYS L, 74(26), 1999, pp. 3930-3932
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
26
Year of publication
1999
Pages
3930 - 3932
Database
ISI
SICI code
0003-6951(19990628)74:26<3930:ITOCTG>2.0.ZU;2-X
Abstract
We have fabricated GaN-based light-emitting diodes using transparent indium tin oxide (ITO) p contacts. ITO-contacted devices required an additional 2 V to drive 10 mA, as compared to similar devices with metal contacts. Howe ver, ITO has lower optical absorption at 420 nm (alpha = 664 cm(-1)) than c ommonly used thin metal films (alpha = 3 x 10(5) cm(-1)). Uniform luminesce nce was observed in ITO-contacted devices, indicating effective hole inject ion and current spreading. (C) 1999 American Institute of Physics. [S0003-6 951(99)01626-5].