An efficient way to improve compositional abruptness at the GaAs on GaInAsinterface

Indium surface segregation during the growth of Ga1-xInxAs by chemical beam epitaxy is evidenced in real time by reflection high-energy electron diffr action. An efficient way to suppress the compositional broadening of GaAs o n the GaInAs interface resulting from the In segregation effect is proposed . It consists in using the chemical reaction of AsCl3 molecules at the surf ace, which is shown to etch layer by layer the Ga1-xInxAs alloy. Monolayer etching precision is thus obtained and used to eliminate the In accumulatio n at the GaInAs surface and the related interface broadening. (C) 1999 Amer ican Institute of Physics. [S0003-6951(99)03526-3].