Channeling implantations of Al+ into 6H silicon carbide

A strong channeling effect of Al+ ions implanted into crystalline SiC has b een observed by Monte Carlo simulations and experiments especially designed to demonstrate this phenomenon have been performed. Depth distributions of implanted Al were measured for on- and controlled off-axis Al implantation s using secondary ion mass spectrometry (SIMS). Much deeper and wider profi les are obtained for the on-axis implantations as compared to off-axis impl ants. For higher doses, the experiment also reveals the growth of an interm ediate peak slightly deeper than the random peak. The origin of the interme diate peak can be understood by combining SIMS results with Monte Carlo sim ulations, which motivates the development of advanced simulation tools for the ion implantation process in SiC. (C) 1999 American Institute of Physics . [S0003-6951(99)01426-6].