Charge sensitivity of radio frequency single-electron transistor

A theoretical analysis of the charge sensitivity of the radio frequency sin gle-electron transistor (rf-SET) is presented. We use the "orthodox" approa ch and consider the case when the carrier frequency is much less than I/e w here I is the typical current through rf-SET. The optimized noise-limited s ensitivity is determined by the temperature T, and at low T it is only 1.4 times worse than the sensitivity of conventional single-electron transistor . (C) 1999 American Institute of Physics. [S0003-6951(99)03026-0].