Electrical properties of Y1Ba2Cu3Ox films grown by liquid phase epitaxy

Y1Ba2Cu3Ox films were grown on MgO(100) substrates by liquid phase epitaxy and their structural and electrical properties were examined. From transmis sion electron microscopy (TEM) plan-view images, it was found that the film s consisted of large grains whose misorientation angles were less than 1 de grees. Although d.c. critical current density values decreased with increas ing film thickness, even a 7 mu m-thick film showed the value of 9 x 10(5) A/cm(2) at 77 K. An rf first penetration field of the film is estimated to be 30 Oe at 10.8 GHz and 77 K, by using a microstrip line resonator with a resonant frequency of 10.8 GHz. The third-order intercept point of the reso nator is at an input power of + 43 dBm and output power of 30 dBm at 77 K. These results suggest that LPE grown Y1Ba2Cu3Ox films have superior d.c. an d rf electrical properties. (C) 1999 Elsevier Science Ltd. All rights reser ved.