Y1Ba2Cu3Ox films were grown on MgO(100) substrates by liquid phase epitaxy
and their structural and electrical properties were examined. From transmis
sion electron microscopy (TEM) plan-view images, it was found that the film
s consisted of large grains whose misorientation angles were less than 1 de
grees. Although d.c. critical current density values decreased with increas
ing film thickness, even a 7 mu m-thick film showed the value of 9 x 10(5)
A/cm(2) at 77 K. An rf first penetration field of the film is estimated to
be 30 Oe at 10.8 GHz and 77 K, by using a microstrip line resonator with a
resonant frequency of 10.8 GHz. The third-order intercept point of the reso
nator is at an input power of + 43 dBm and output power of 30 dBm at 77 K.
These results suggest that LPE grown Y1Ba2Cu3Ox films have superior d.c. an
d rf electrical properties. (C) 1999 Elsevier Science Ltd. All rights reser
ved.