Cadmium sulfide films were grown on glass, silicon, and ITO substrates by c
hemical-bath deposition (CBD) at 358 K, and studied by atomic force microsc
opy, Auger electron microscopy and X-ray diffraction. CdS film growth initi
ates immediately and thickness increases with deposition time. The rms roug
hness of CdS films grown for 1 to 10 min (thicknesses of 10 to 70 nm) was m
easured by atomic force microscopy. The roughness of films grown on ITO rem
ains similar to that of the substrate regardless of deposition time. On the
other hand, the roughness of CdS films grown on glass and silicon increase
s with deposition time, finally reaching a roughness similar to that of fil
ms grown on ITO. Auger profiles show that the CdS/substrate interface is no
t abrupt and depends on the substrate. Substrate roughness plays an importa
nt role during the initial CdS growth process. X-ray studies show that sili
con substrates are not appropriate for CdS film growth by CBD. The most app
ropriate substrate is ITO. (C) 1999 Elsevier Science B.V. All rights reserv
ed.