Citation
Dx. Shi et al., Synthesis of crystalline C3N4 by MPCVD, APPL SURF S, 148(1-2), 1999, pp. 50-55
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332
→ ACNP
Volume
148
Issue
1-2
Year of publication
1999
Pages
50 - 55
Database
ISI
SICI code
0169-4332(199906)148:1-2<50:SOCCBM>2.0.ZU;2-8
Abstract
In this study, carbon nitride thin films are synthesized on Si and Pt subst
rates by microwave plasma chemical vapor deposition (MPCVD). The major part
of the films is composed of alpha-C3N4 and beta-C3N4. XPS and FT-IR spectr
a strongly support the existence of C-N covalent bonds in C3N4. Raman spect
ra also support the existence of beta-C3N4. The carbon nitride films on Pt
substrates have a high bulk modulus of 349 GPa. (C) 1999 Published by Elsev
ier Science B.V. All rights reserved.