The electronic structures of vanadium carbides have been examined using X-r
ay photoelectron spectroscopy (XPS) before and after Ar sputtering. After A
r ion sputtering for 1 h, there was no significant variation observed in bo
th the surface electronic structure and the amounts of core levels of V 2p,
C 1s, and O 1s for vanadium carbides used in the present study. A species
with a binding energy of 513.2 +/- 0.2 eV from vanadium carbides was newly
observed, and was estimated to be V1.3+ using the plot of the V 2p(3/2) bin
ding energies against the oxidation number. This value indicates that the a
bsolute magnitude of charge transfer from V 3d states to C 2p states is 1.3
electrons per vanadium in vanadium carbides. Among the deconvoluted three
carbon peaks, the carbidic carbon peak appeared at 282.4 +/- 0.2 eV and was
considered to be due to the photoelectrons ejected from the carbon in vana
dium carbide lattice. For all of 1-h sputtered vanadium carbides except for
V8C7-4, the average ratio of C-c/Vdelta+ was nearly unity. Using NH3 decom
position reaction, the catalytic activity measurements exhibited that the v
anadium carbide with the smallest C-c/Vdelta+ ratio had the highest activit
y, These results indicate that the most active catalyst was carbon-deficien
t at surface of the vanadium carbide used in this study. (C) 1999 Elsevier
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