The surface properties of vanadium compounds by X-ray photoelectron spectroscopy

Authors
Citation
Jg. Choi, The surface properties of vanadium compounds by X-ray photoelectron spectroscopy, APPL SURF S, 148(1-2), 1999, pp. 64-72
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
148
Issue
1-2
Year of publication
1999
Pages
64 - 72
Database
ISI
SICI code
0169-4332(199906)148:1-2<64:TSPOVC>2.0.ZU;2-N
Abstract
The electronic structures of vanadium carbides have been examined using X-r ay photoelectron spectroscopy (XPS) before and after Ar sputtering. After A r ion sputtering for 1 h, there was no significant variation observed in bo th the surface electronic structure and the amounts of core levels of V 2p, C 1s, and O 1s for vanadium carbides used in the present study. A species with a binding energy of 513.2 +/- 0.2 eV from vanadium carbides was newly observed, and was estimated to be V1.3+ using the plot of the V 2p(3/2) bin ding energies against the oxidation number. This value indicates that the a bsolute magnitude of charge transfer from V 3d states to C 2p states is 1.3 electrons per vanadium in vanadium carbides. Among the deconvoluted three carbon peaks, the carbidic carbon peak appeared at 282.4 +/- 0.2 eV and was considered to be due to the photoelectrons ejected from the carbon in vana dium carbide lattice. For all of 1-h sputtered vanadium carbides except for V8C7-4, the average ratio of C-c/Vdelta+ was nearly unity. Using NH3 decom position reaction, the catalytic activity measurements exhibited that the v anadium carbide with the smallest C-c/Vdelta+ ratio had the highest activit y, These results indicate that the most active catalyst was carbon-deficien t at surface of the vanadium carbide used in this study. (C) 1999 Elsevier Science B.V. All rights reserved.