1.3 mu m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

Authors
Shernyakov, YM Bedarev, DA Kondrat'eva, EY Kop'ev, PS Kovsh, AR Maleev, NA Maximov, MV Mikhrin, SS Tsatsul'nikov, AF Ustinov, VM Volovik, BV Zhukov, AE Alferov, ZI Ledentsov, NN Bimberg, D
Citation
Ym. Shernyakov et al., 1.3 mu m GaAs-based laser using quantum dots obtained by activated spinodal decomposition, ELECTR LETT, 35(11), 1999, pp. 898-900
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
11
Year of publication
1999
Pages
898 - 900
Database
ISI
SICI code
0013-5194(19990527)35:11<898:1MMGLU>2.0.ZU;2-L
Abstract
Low threshold current density (J(th) = 65A/cm(2)) operation near 1.3 mu m a t room temperature (RT) is realised for lasers using InAs/ InGaAs/GaAs quan tum dots (QDs). The lasing occurs via the QD ground state: for cavity lengt h L > 1mm. The differential efficiency is 40% and internal losses are 1.5cm (-1). The characteristic temperature near RT is 160K.