DC model for BiMOS structure and its adaptation to a circuit simulation environment

The objective was to develop a model that can accurately describe the hybri d-mode operation of deep submicron LDD pMOSFETs in a circuit simulation env ironment. The device threshold voltage, various current components, transco nductance, and output conductance are extracted experimentally, modelled an alytically, and adapted to meet the circuit simulation requirements. The la tter necessitates that the model equations, together with their derivatives , be continuous. The effects of independently biasing the source, drain, ga te, and body potentials on the device currents and parameters are highlight ed. A critical comparison between the presented model XSIM and HSPICE is ma de. The results show that unlike HSPICE, where the MOSFET and the bipolar d evice embedded in the structure have to be simulated as two entities, the s uggested model describes the composite structure as a single entity and pre dicts its behaviour accurately for a range of different channel lengths bas ed on a single set of process and device model parameters.