High-voltage sustaining structure with embedded oppositely doped regions

A voltage-sustaining structure with embedded oppositely doped islands is pr oposed. Due to the compensation of the field induced by these regions, the doping density of the voltage-sustaining layer can be made larger than that in a conventional voltage-sustaining layer with the same breakdown voltage , and therefore the on-voltage can be reduced. The theory of design for suc h structures is found to be in good agreement with the results of full 2-di mensional simulation. The on-state performance, the transient behaviour and the potential applications of this structure in power devices are also dis cussed.