We describe a novel on-wafer resistive noise source (ORNS) suitable for noi
se parameter characterization of microwave devices using the cold noise pow
er measurement technique. The noise source can enhance measurement accuracy
by providing a calibrated noise temperature directly at the device referen
ce plane. A procedure to determine the excess noise ratio of the noise sour
ce is presented. Noise figure measurements performed up to 40 GHz with the
on-wafer noise source and with a commercial coaxial noise source are in goo
d agreement, thereby validating the technique, The novel source is effectiv
e as a noise standard up to millimeter-wave frequencies.