A novel on-wafer resistive noise source

Citation
P. Beland et al., A novel on-wafer resistive noise source, IEEE MICR G, 9(6), 1999, pp. 227-229
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
9
Issue
6
Year of publication
1999
Pages
227 - 229
Database
ISI
SICI code
1051-8207(199906)9:6<227:ANORNS>2.0.ZU;2-8
Abstract
We describe a novel on-wafer resistive noise source (ORNS) suitable for noi se parameter characterization of microwave devices using the cold noise pow er measurement technique. The noise source can enhance measurement accuracy by providing a calibrated noise temperature directly at the device referen ce plane. A procedure to determine the excess noise ratio of the noise sour ce is presented. Noise figure measurements performed up to 40 GHz with the on-wafer noise source and with a commercial coaxial noise source are in goo d agreement, thereby validating the technique, The novel source is effectiv e as a noise standard up to millimeter-wave frequencies.