InPHEMT's with 39% PAE and 162-mW output power at V-band

Authors
Grundbacher, R Nishimoto, M Chin, TP Chen, YC Lai, R Yamauchi, D Schreyer, G Block, T Medvedev, V Streit, D
Citation
R. Grundbacher et al., InPHEMT's with 39% PAE and 162-mW output power at V-band, IEEE MICR G, 9(6), 1999, pp. 236-238
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND GUIDED WAVE LETTERS
ISSN journal
10518207 → ACNP
Volume
9
Issue
6
Year of publication
1999
Pages
236 - 238
Database
ISI
SICI code
1051-8207(199906)9:6<236:IW3PA1>2.0.ZU;2-I
Abstract
We report state-of-the-art V-band power performance of 0.15-mu m gate lengt h InGaAs/InAlAs/InP HEMT's. The 500-mu m periphery InP HEMT's were measured in fixture at 60 GHz and demonstrated an output power of 162 mW (22.1 dBm) with 39% power-added efficiency (PAE) and 6.1-dB power gain at an input po wer of 16 dBm. These results represent the best combination of power and PA E reported to date at this frequency for any solid state device.