Self-defined AlAs oxide-current-aperture buried-heterostructure ridge waveguide InGaAs single-quantum-well diode laser

Techniques for fabricating a self-defined AlAs oxide-current-aperture that is applicable to very small stripe width edge emitting devices and small ap erture vertical-cavity surface-emitting lasers are reported. InCaAs single- quantum-well buried-heterostructure edge-emitting lasers with a self-define d A1As oxide-current-aperture were fabricated by a three-step metal-organic chemical vapor deposition growth to demonstrate the validity of the proces s. The A1As layer for the A1As oxide was grown by selective area growth tec hniques. The threshold current and differential quantum efficiency of 3-mu m stripe width, 446-mu m-long laser were 2 mA and 91%, respectively, The le akage current at -15 V was less than 20 nA.