Carrier capture and escape processes in In0.25Ga0.75As-GaAs quantum-well lasers

We have extracted the ratio between the carrier capture and escape times, e ta, for In0.25Gao0.75As-GaAs lasers containing one, two, or three quantum w ells, from high-frequency subthreshold impedance measurements at different temperatures. Our results show that the carrier capture process dominates o ver the diffusion along the confinement region in the overall transport/cap ture process. The obtained value for eta is comparable to unity, and this f act has to be taken into account to obtain real material parameters, such a s the carrier lifetime and the radiative recombination coefficient.