Angled-facet S-bend semiconductor optical amplifiers for high-gain and large-extinction ratio

Citation
S. Kitamura et al., Angled-facet S-bend semiconductor optical amplifiers for high-gain and large-extinction ratio, IEEE PHOTON, 11(7), 1999, pp. 788-790
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
11
Issue
7
Year of publication
1999
Pages
788 - 790
Database
ISI
SICI code
1041-1135(199907)11:7<788:ASSOAF>2.0.ZU;2-P
Abstract
The extinction ratio of an optical gate with a spot-size-converter-integrat ed semiconductor optical amplifier (SSC-SOA) is deteriorated following the direct coupling of unguided light between the input and output fibers, In t his letter, an S-bend waveguide structure is introduced into an active wave guide to suppress such direct coupling. Angled facet structures are also in troduced for obtaining low facet reflectivity. The fabricated SSC-SOA opera ting at 1.55-mu m wavelength achieves an extinction ratio up to 70 dB and a fiber-to-fiber gain of 20 dB.