400-mW single-frequency 660-nm semiconductor laser

Using an angled-grating broad-area structure in GaInP-AlInP material system , we obtain single spatial and longitudinal-mode operation at 660 nm, The g rating stabilizes the mode to deliver over 400-mW continuous-wave at room t emperature from a 60-mu m-wide stripe. This is about ten times higher than conventional distributed-feedback power output levels, and is the highest s ingle-frequency power from a monolithic semiconductor de,ice in this wavele ngth range. These devices should be useful for single-mode-fiber coupling a nd in applications where high-wavelength stability is required, such as spe ctroscopy, interferometry, or metrology.