2.3-2.7-mu m room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers

A new approach in the design of (A1)InGaAsSb-GaSb quantum-well separate con finement heterostructure (QW-SCH) diode lasers has led to continuous-wave ( CW) room-temperature lasing up to 2.7 mu m This has been achieved by using quasiternary heavily strained InGaSb(As) QW's inside a broad-waveguide SCH laser structure. The QW compositions are chosen in the region outside the m iscibility gap and, as a consequence, do not suffer front clustering and co mposition inhomogeneity normally found with quaternary InGaAsSb compounds o f 2.3-2.7-mu m spectral range, Very low threshold current density (similar to 300 A/cm(2)) and high CW output powers (>100 mW) were obtained from devi ces operating in the 2.3-2.6-mu m wavelength range.