Transient simulation of millimeter-wave circuits incorporating numerical device modeling

Citation
Gb. Tait et Sh. Jones, Transient simulation of millimeter-wave circuits incorporating numerical device modeling, IEEE MICR T, 47(6), 1999, pp. 877-881
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
47
Issue
6
Year of publication
1999
Part
2
Pages
877 - 881
Database
ISI
SICI code
0018-9480(199906)47:6<877:TSOMCI>2.0.ZU;2-H
Abstract
A fast convolution-based computational approach is employed to integrate nu merical solid-state device simulation with nonlinear millimeter-wave circui t simulation. Unlike pre,previous combined harmonic-balance/deviee approach es, the high-frequency circuit/physical device response is allowed to evolv e in time to its natural steady-state mode of operation, permitting insight into harmonic and parametric energy exchange, stability, load pulling, and frequency tuning effects. To demonstrate this computationally efficient ap proach, a secund-harmonic 150-GHz transferred electron oscillator is simula ted using both conventional Gunn and novel stable-depletion-layer InP devic es. The integrated det;device/circuit simulations in the time domain enable us to investigate the formation and buildup of the oscillation modes in de tail.