Global modeling of microwave applications by combining the FDTD method anda general semiconductor device and circuit simulator

Citation
A. Witzig et al., Global modeling of microwave applications by combining the FDTD method anda general semiconductor device and circuit simulator, IEEE MICR T, 47(6), 1999, pp. 919-928
Citations number
23
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
47
Issue
6
Year of publication
1999
Part
2
Pages
919 - 928
Database
ISI
SICI code
0018-9480(199906)47:6<919:GMOMAB>2.0.ZU;2-C
Abstract
This paper presents the coupling of two commercially available simulation c odes: DESSIS-ISE, a multidimensional semiconductor device and circuit simul ator, and EMLAB-ISE, an electromagnetic-field solver based on the finite-di fference time-domain (FDTD) method. Full-wave electromagnetics and nonlinea r devices are simulated in a coupled self-consistent way using the lumped-e lement approach [1], [2], The active region of the del ice is represented a s a lumped element within the FDTD grid, while the packaging and waveguidin g structures are modeled in their physical dimensions. For the nonlinear de vice, multidimensional semiconductor device simulation, as well as standard SPICE models, may be applied, Several examples show the capability of comp rehensive analysis of microwave applications and the versatility in the sim ulation of the active elements. The coupling formalism is explained in deta il, including time-step adjustment and biasing of active devices.