The disilaketenyl radical (HSiSiO) in its ground and first excited electronic states

Citation
St. Brown et al., The disilaketenyl radical (HSiSiO) in its ground and first excited electronic states, J CHEM PHYS, 111(1), 1999, pp. 227-234
Citations number
57
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CHEMICAL PHYSICS
ISSN journal
00219606 → ACNP
Volume
111
Issue
1
Year of publication
1999
Pages
227 - 234
Database
ISI
SICI code
0021-9606(19990701)111:1<227:TDR(II>2.0.ZU;2-X
Abstract
The disilaketenyl (HSiSiO) radical, an isovalent isomer of the ketenyl (HCC O) radical, has been investigated theoretically using ab initio electronic structure theory. For the two lowest-lying electronic states ((X) over tild e (2)A " and (A) over tilde (2)A') of HSiSiO, total energies and physical p roperties including equilibrium geometries, dipole moments, harmonic vibrat ional frequencies, and associated infrared (IR) intensities were predicted at the self-consistent-field (SCF) and configuration interaction with singl e and double excitations (CISD) levels of theory with a wide range of basis sets. At the CISD optimized geometries coupled cluster with single and dou ble excitations (CCSD) and CCSD with perturbative triple excitations [CCSD( T)] energies were also determined. The ground and first excited electronic states of HSiSiO were predicted to be transplanar bent structures, while th e linear 1 (2)Pi state was found to be a saddle point with two imaginary vi brational frequencies. The (X) over tilde (2)A " and (A) over tilde (2)A' s tates of HSiSiO are more distorted from linearity and more polar than the c orresponding states of HCCO. In particular the HSiSiO ground state is predi cted to have a peculiarly acute HSiSi bond angle of only 75 degrees, almost suggesting an Si-Si bridging hydrogen. At the CCSD(T) level of theory with the largest basis set, Dunning's cc-pVQZ, the first excited state was pred icted to lie 36.3 kcal/mol (1.57 eV, 12 700 cm(-1)) classically above the g round state. With the same method the barriers to linearity were determined to be 45.2 kcal/mol (1.96 eV, 15 800 cm(-1)) for the ground state and 8.9 kcal/mol (0.39 eV, 3100 cm(-1)) for the first excited state, respectively. Due to their large dipole moments and relatively large vibrational infrared (IR) intensities, the two lowest-lying electronic states of HSiSiO may be suitable for IR spectroscopic studies, and the ground state for microwave s pectroscopic investigations. (C) 1999 American Institute of Physics. [S0021 -9606(99)30225-7].