Prospects of uncooled HgCdTe detector technology

Citation
We. Tennant et al., Prospects of uncooled HgCdTe detector technology, J ELEC MAT, 28(6), 1999, pp. 582-588
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
6
Year of publication
1999
Pages
582 - 588
Database
ISI
SICI code
0361-5235(199906)28:6<582:POUHDT>2.0.ZU;2-C
Abstract
Over the last several years cooled applications of HgCdTe at low temperatur es have proliferated. Having low fundamental dark current at any given wave length and temperature makes HgCdTe attractive for high temperature applica tions as well. We are exploring detectors with cut off wavelengths from the near to middle infrared region (similar to 1.5 to similar to 4 mu m). Theo ry allows applications from low light level imaging in starlight and "night glow" to thermal imaging, both with useful sensitivities at room temperatur e. The demonstrated possibility of reducing or eliminating traditional reco mbination processes (radiative and Auger) further increase the attractivene ss of HgCdTe. Current materials technology shows some evidence that these s ensitivities can be attained. Current detector technology, being limited by SRH traps, appears to require modest cooling (to about 250K). Improved mat erials and processes should eliminate the need for even this cooling.