Low temperature thermal annealing effects in bulk and epitaxial CdxHg1-xTe

Low temperature thermal treatments of CdHgTe, normally in the presence of m ercury vapor, are still used on both bulk samples and single and multi-laye r epitaxial layers to modify or control the electrical properties. This pap er reviews the recent literature reports in this area and develops the exis ting model to explain certain features of the p to n conversion process. A brief update on compositional interdiffusion at low temperatures is given w hich shows significant disagreement within literature values. In addition, the paper will describe and comment on some as yet unexplained results (int erdiffusion and electrical behavior) following low temperature treatments i n both liquid phase and metalorganic vapor phase epitaxial (LPE and MOVPE) layers.