Study of CdSSe : V and CdMnTe : V photorefractive effect

Authors
Chattopadhyay, K Pour, KM Egarievwe, SU Ndap, JO Chen, H Ma, X Morgan, S Burger, A
Citation
K. Chattopadhyay et al., Study of CdSSe : V and CdMnTe : V photorefractive effect, J ELEC MAT, 28(6), 1999, pp. 666-669
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
6
Year of publication
1999
Pages
666 - 669
Database
ISI
SICI code
0361-5235(199906)28:6<666:SOC:VA>2.0.ZU;2-A
Abstract
A large photorefractive effect was measured in CdS0.8 Se-0.2:V and Cd0.55Mn 0.45Te:V ternary crystals which shows promise for many device applications such as optical signal processing and optical limiting. In this study, we c ompared the results obtained from two-wave mixing experiments with Cd0.55Mn 0.45Te:V and CdS0.8Se0.2:V crystals at the 633 nm wavelength. As the signal to pump beam ratio was varied from 10(-1) to 10(-4), Cd0.55Mn0.45Te:V and CdS0.8Se0.2:V showed a maximum photorefractive gain of 0.17 and 0.20 cm(-1) , respectively. The grating formation time of both the crystals were measur ed to be in the milli-second range at an incident intensity of 200 mW/cm(2) .