Cadmium zinc telluride substrate growth, characterization, and evaluation

Authors
Kestigian, M Bollong, AB Derby, JJ Glass, HL Harris, K Hettich, HL Liao, PK Mitra, P Norton, PW Wadley, H
Citation
M. Kestigian et al., Cadmium zinc telluride substrate growth, characterization, and evaluation, J ELEC MAT, 28(6), 1999, pp. 726-731
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
6
Year of publication
1999
Pages
726 - 731
Database
ISI
SICI code
0361-5235(199906)28:6<726:CZTSGC>2.0.ZU;2-K
Abstract
Cadmium zinc telluride substrates were grown by the vertical and horizontal Bridgman techniques, characterized, and evaluated. Evaluation included the fabrication and testing of infrared focal plane arrays. Correlations of su bstrate defects and FPA performance were made.