Arsenic incorporation during MBE growth of HgCdTe

Authors
Berding, MA Sher, A
Citation
Ma. Berding et A. Sher, Arsenic incorporation during MBE growth of HgCdTe, J ELEC MAT, 28(6), 1999, pp. 799-803
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
6
Year of publication
1999
Pages
799 - 803
Database
ISI
SICI code
0361-5235(199906)28:6<799:AIDMGO>2.0.ZU;2-A
Abstract
We discuss the equilibrium model of the amphoteric behavior of arsenic in H gCdTe and its applicability to material grown by molecular beam epitaxy. Su ggestions are made on how to achieve active incorporation by manipulating t he surface orientation, or by using precursors that provide steric hindranc e.