We. Spicer et al., Can studies of the II-VIs profit from the use of synchrotron radiation andthe DOE financial support thereof?, J ELEC MAT, 28(6), 1999, pp. 804-809
Advances in experimental techniques are the life blood of technology and sc
ience. Some of these are occurring via development of new techniques using
synchrotron radiation (SR). Of particular interest are techniques developed
in support of the long range plan of the Si integrated circuit (IC) indust
ry (the "roadmap") to strongly reduce the feature size in IC well into the
next century. Two newly developed and/or improved SR techniques are examine
d. First is the investigation of the electrical deactivation mechanism in S
i with very large (e.g., 2 x 10 (20)/cm(3)) As doping. Here newly developed
standing wave spectroscopy techniques are used. Second, the use of total r
eflection x-ray fluorescence to detect metallic atoms on Si production wafe
rs. The general advantages of SR are also outlined.