Interrelations between defects in the Hg1-xCdxTe epilayers and their measured lattice parameters and composition

Citation
N. Mainzer et al., Interrelations between defects in the Hg1-xCdxTe epilayers and their measured lattice parameters and composition, J ELEC MAT, 28(6), 1999, pp. 850-853
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
6
Year of publication
1999
Pages
850 - 853
Database
ISI
SICI code
0361-5235(199906)28:6<850:IBDITH>2.0.ZU;2-Q
Abstract
Absolute values of lattice parameters in Hg1-xCdxTe epilayers were precisel y measured by high-resolution x-ray diffraction (Bond method), and then com pared with those calculated using Cd contents, x, which were derived from F ourier transform infrared transmission spectra. A part of the samples revea led significant discrepancies between measured and calculated lattice param eters, the differences being both of positive and negative signs. The obtai ned results are discussed in the framework of clusters of the point defects that were visualized by high-resolution scanning electron microscopy.