New synthetic method of forming aluminum oxynitride by plasma arc melting

A new synthetic method of forming the gamma-phase of aluminum oxynitride (a lon) has been proposed. alon has been successfully synthesized by the DC ni trogen plasma are using alpha-Al2O3 and AIN as starting materials. Alon rap idly forms in a liquid state under thermal plasma. The obtained lattice par ameter of alon has been determined as a function of the concentration of Al 2O3. Evaporation takes place during are melting. The condensed alon from th e vapor consists of nanoscale-sized spherical particles, and these particle s are in single crystals. The evaporation mechanism of alon during are melt ing is discussed. Thus, are plasma processing is a promising method for syn thesizing alon and producing the ultrafine powder.