Processing of oriented K(Ta,Nb)O-3 films using chemical solution deposition

K(Ta,Nb)O-3 (KTN) thin films have been prepared by the chemical solution de position method. KTN precursors consisted of a uniform mixture of K[Ta(OC2H 5)(6)] and K[Nb(OC2H5)(6)] with interaction at the molecular level. Perovsk ite KTN thin films with the desired composition (Ta/Nb = 65/35, 50/50, and 35/65) were synthesized from the precursor solutions by the dip coating met hod. KTN thin films with (100) preferred orientation were successfully synt hesized on MgO(100) and Pt(100)/MgO(100) substrates. X-ray pole figure meas urements showed that grains of KTN films had a prominent three-dimensional regularity on MgO(100) and Pt(100)/MgO(100) surfaces. The Curie temperature s of KTN films decreased with increasing Ta/Nb ratio. Typical P-E hysteresi s loops were observed for KTN thin films of three compositions on Pt(100)/M gO(100) substrates. The values of remanent polarization (P-r) of KTN films increased as the Ta/Nb ratio changed from 65/35 to 35/65.