This paper describes a method for the preparation of silicon nitride (Si3N4
) seeds that have an average aspect ratio of similar to 4, The seeds are pr
epared via heat treatment of a powder mixture that contains oc-phase-rich S
i3N4 and 0.5 wt% Y2O3 at a temperature of 1800 degrees C and a nitrogen pre
ssure of 35 kPa. A Y-Si-O-N liquid forms during heat treatment; this liquid
acts as a flux for seed precipitation. During cooling, the Y-Si-O-N liquid
transforms to a thin intergranular grain-boundary phase and causes strong
agglomeration of the seeds. The seeds can be isolated by dissolving the gra
in-boundary phase in hot phosphoric acid, followed by an ultrasonic treatme
nt (for 30 min). The method can be used to produce large quantities of seed
s.