Study of electrical properties, crystallization kinetics and structure of the glassy Cu35As20Te49 semiconductor system

Preparation of glassy arsenic telluride with high Cu content has been carri ed out. The prepared Cu35As20Te45 glassy semiconducting system shows many i nteresting characteristics. It has a low melting point (325 degrees C), hig h density (6.2 gm cm(-3)) and low resistivity (2.86 Ohm cm at room temperat ure). Studies of the crystallization kinetics using the non-isothermal sing le scan technique shows that random nuclei are already present in the as-qu enched alloy and that the growth occurs in three dimensions. Thermal anneal ing of the alloy at 160 degrees C gives crystalline material of large grain s (similar to 150 mu m) embedded in less crystalline matrix. Some of the ph ases at which the alloy crystallizes have been identified by X-ray diffract ion. (C) 1999 Elsevier Science S.A. All rights reserved.