Microstructural and electronic transport properties of PtxSi/p-Si(100) metal-semiconductor composite films

Authors
Rahman, A Bates, CW Marshall, AF Qadri, SB Bari, T
Citation
A. Rahman et al., Microstructural and electronic transport properties of PtxSi/p-Si(100) metal-semiconductor composite films, MATER LETT, 39(6), 1999, pp. 343-349
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
39
Issue
6
Year of publication
1999
Pages
343 - 349
Database
ISI
SICI code
0167-577X(199906)39:6<343:MAETPO>2.0.ZU;2-T
Abstract
Sputtered PtxSi/p-Si(100) films were characterized to assess their potentia l for applications in buried Schottky barrier devices. Transmission electro n microscopy (TEM), X-ray diffraction and Hall measurements were used to me asure structural and electronic transport properties and particle distribut ion. The findings presented in this paper provide insight into the potentia l device applications of these structures as photodetector devices operatin g in the 3-5 mu m range. (C) 1999 Elsevier Science B.V. All rights reserved .