Ultrahigh density, high-data-rate NEMS-based AFM data storage system

Citation
P. Vettiger et al., Ultrahigh density, high-data-rate NEMS-based AFM data storage system, MICROEL ENG, 46(1-4), 1999, pp. 11-17
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
46
Issue
1-4
Year of publication
1999
Pages
11 - 17
Database
ISI
SICI code
0167-9317(199905)46:1-4<11:UDHNAD>2.0.ZU;2-X
Abstract
We report on an AFM-array concept ("Millipede") for data storage of potenti ally ultrahigh density, terabit capacity, and high data rate. Thermomechani cal writing and reading in very thin polymer films is used to store and sen se 30-40-nm-sized bits with similar pitch size in very thin layers of PMMA, resulting in 400-500 Gbit/in(2) storage densities. Data rates of several h undred Mbit/s are envisioned by operating very large (32x32) 2D AFM arrays in parallel. We have successfully batch-fabricated first all-silicon 5x5 an d 32x32 AFM cantilever array chips. They constitute a major step of the Mil lipede concept towards terabit storage systems with small form factor and h igh data rates. Our 32x32 array chip is the first VLSI-NEMS (Nano ElectroMe chanical Systems) for nanotechnological applications.