Modeling and simulation of membrane distortions in Next Generation Lithography (NGL) masks

Next Generation Lithographies will face major challenges to meet the allott ed error budgets for sub-130 nm technologies. The development of low distor tion masks will be essential. Using comprehensive finite element simulation models, mask distortions can be efficiently and accurately predicted. Patt ern-specific distortions have been evaluated to investigate pattern placeme nt accuracy and stability. For the three principal membrane mask technologi es, typical pattern-transfer results are presented.