Lithography simulation with aerial image - Variable threshold resist model

This paper explores the concept of a variable threshold resist model (VTRM) where the model is trained with data from a specific resist process, and m ay be applied to lithography simulation for that resist process with a wide variety of optical exposure conditions. This type of simulation is based o n aerial image simulation and the application of a simple algebraic formula . It is therefore, very fast and applicable to a wide variety of simulation applications. We have trained the model with the 248nm resists TOK TDUR022 and Shipley UV6. In both cases the model does a good job of capturing most resist dynamics over a wide range of dose, critical dimension (CD), pitch, focus, and partial coherence conditions.