Can we do 0.15 mu m lithography with KrF?

Deep-UV lithography using 248 and 193-nm light will likely be the microlith ography technology of choice for the manufacture of advanced memory and log ic semiconductor devices for the next decade. Since 193nm lithography devel opment has been slow, the extension of 248nm technology to 150nm and beyond is required. Advanced techniques, such as Optical Proximity Correction (OP C) and Phase Shift Masks (PSM) will be needed in order to maintain sufficie nt process latitude. This paper will discuss recent work to investigate the capability of 248nm lithography at 150nm. Imaging results using conventional and off-axis illum ination (OAI) will be presented. Key resist performance parameters will be discussed, including process latitude, linewidth and line length control an d full field critical dimension (CD) control. Although the performance appe ars to be adequate for early process and device development, further enhanc ements will be required for a manufacturable process at 150nm.