Single-electron transistor controlled by environmental impedance: Effects of capacitive environmental impedance

Coulomb blockade is strongly affected by the environmental impedance. This means that a variable resistive environmental impedance R-env can control t he characteristics of the single-electron devices. Self-consistent numerica l calculation shows that the controllability of the device is degraded as t he capacitive environmental impedance C-env increases. It is observed that the size of Coulomb gap can be controlled by R-env if C-env is small, while it can not be controlled by R-env when C-env increases. This is consistent with the numerical calculation.